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DMG6968UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
* * * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) ESD Protected Up To 2KV Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * Case: TSSOP-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.039 grams (approximate)
D
D
1 2 3 4
D S1 S1 G1
D S2 S2 G2
8 7 6 5
G1
G2
S1 N-Channel N-Channel
S2
ESD PROTECTED TO 2kV
Top View
Bottom View
Top View Pin Configuration
Internal Schematic
Ordering Information (Note 3)
Part Number DMG6968UTS-13
Notes:
Case TSSOP-8
Packaging 2500 / 13" Tape & Reel
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
N6968U
YY WW
1 4
Part no Xth week : 01~52 Year: "09" = 2009
Top View
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
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DMG6968UTS
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Pulsed Drain Current Steady State TA = 25C TA = 70C Symbol VDSS VGSS ID IDM Value 20 12 5.2 3.5 30 Unit V V A A
Thermal Characteristics
Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 1.0 125 -55 to +150 Unit W C/W C
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
Symbol BVDSS IDSS IGSS BVSGS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf
Min 20 12 0.35 -
Typ 18 21 26 13 0.7 143 74 29 202 8.8 1.4 3.0 53 78 562 234
Max 1.0 10 0.95 23 27 34 1.0 -
Unit V A A V V m S V pF pF pF nC nC nC ns ns ns ns
Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 10V, VDS = 0V VDS = 0V, IG = 250A VDS = VGS, ID = 250A VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 5V, ID = 5A VGS = 0V, IS = 1A
VDS =10V, VGS = 0V f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A
VDD = 10V, VGS = 4.5V, RL = 10, RG = 6
4. Device mounted on FR-4 PCB. 5. Short duration pulse test used to minimize self-heating effect.
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated
DMG6968UTS
30
VGS = 8V VGS = 4.5V VGS = 3.0V VGS = 2.5V
20
VDS = 5V
25 ID, DRAIN CURRENT (A)
16 ID, DRAIN CURRENT (A)
20
VGS = 2.0V
12
15
VGS = 1.5V
8
10
TA = 150C
5 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2
4
TA = 125C
TA = 85C T A = 25C
0 0
T A = -55C
0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.04
VGS = 4.5V
0.04
0.03
T A = 150C
0.03
VGS = 1.8V
0.02
T A = 125C TA = 85C T A = 25C
0.02
VGS = 2.5V VGS = 4.5V
0.01
TA = -55C
0.01
0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30
0 0 4 8 12 16 ID, DRAIN CURRENT (A) 20
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
0.04
1.6
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.4
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
VGS = 2.5V ID = 5.5A
0.03
VGS = 2.5V ID = 5.5A
1.2
VGS = 4.5V ID = 10A
0.02
1.0
VGS = 4.5V ID = 10A
0.01
0.8
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
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(c) Diodes Incorporated
DMG6968UTS
1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2
20
16
1.0 0.8
ID = 1mA
IS, SOURCE CURRENT (A)
TA = 25C
12
0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
ID = 250A
8
4
0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
1,000
f = 1MHz
100,000
IDSS, LEAKAGE CURRENT (nA)
10,000
T A = 150C
C, CAPACITANCE (pF)
Ciss
1,000
T A = 125C
100
Coss
100
T A = 85C
Crss
10
TA = 25C
10 0 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance
RDS(on) Limited
1
4
20
0
2
4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
100
-ID, DRAIN CURRENT (A)
10
DC PW = 10s
1
PW = 1s PW = 100ms PW = 10ms PW = 1ms
0.1
PW = 100s PW = 10s TJ(m ax) = 150C TA = 25C Single Pulse
0.01 0.1
-VDS,
1 10 DRAIN-SOURCE VOLTAGE (V) Fig. 11 Safe Operation Area
100
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
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(c) Diodes Incorporated
DMG6968UTS
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 157C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
Package Outline Dimensions
D
See Detail C
E E1
e b
c Gauge plane
A D
A2 L A1
a
TSSOP-8L Dim Min Max Typ a 0.09 - - A 1.20 - - A1 0.05 0.15 - A2 0.825 1.025 0.925 b 0.19 0.30 - c 0.09 0.20 - D 2.90 3.10 3.025 e 0.65 - - E 6.40 - - E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm
Detail C
Suggested Pad Layout
Y X C3 C2 G C1
Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated
DMG6968UTS
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated

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